N Type Enhancement Mosfet



APM2701CG Datasheet PDF - TY Semiconductor

Mosfet Enhancement Mode

Part NumberAPM2701CG
DescriptionDual Enhancement Mode MOSFET
Manufacturers TY Semiconductor 
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MOSFET
APM2701CG
N-Channel VDS=20V ID=3A
RDS(ON) 110m (VGS = 2.5V)
RDS(ON) 190m (VGS =-4.5V)
( SOT-23-6 )
G1 S2 G2
G1
n-channel
Parameter
Gate-Source Voltage
Pulsed Drain Current
TA=25
Diode Continuous Forward Current
Junction and Storage Temperature Range
D2
Sy mb ol
VG S
I DM
IS
TJ , TSTG
20 -20
3 -1.5
0. 83
1 -1
-55 to 150
V
W
/W
http://www.twtysemi.com
4008-318-123
Free Datasheet http://www.datasheet4u.com/

N Channel Enhancement Mosfets


Enhancement Mosfet Vs Depletion Mosfet

N-channel-Enhancement-Mode-MOSFET Digital-CMOS-Design CMOS-Processing-Technology planar-process-technology,Silicon-Crystal-Growth, Twin-tub-Process, Wafer-Formation-Analog electronic circuits is. The MOSFET is another category of field-effect transistor.There are two types of MOSFET, Enhancement mode MOSFET and Depletion mode MOSFET. This oxide layer acts as an insulator (sio 2 insulates from the substrate), and hence the MOSFET has another name as IGFET. In the construction of MOSFET, a lightly doped substrate, is diffused with a heavily doped region. Depending upon the substrate used, they are called as P-type and N-type MOSFETs.

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P Channel Enhancement Mosfet


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N-channel Enhancement-type Mosfet Has

Part NumberDescriptionManufacturers
APM2701CGThe function is Dual Enhancement Mode MOSFET.
Anpec
APM2701CGThe function is Dual Enhancement Mode MOSFET.
TY Semiconductor

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